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M.2
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$363.00- Sequential Reads: up to 3,000 MB/s3)
- Sequential Writes: up to 1,400 MB/s3)
- Random Reads: up to 480K IOPS
- Random Writes: up to 42K IOPS
- Random Reads: up to 85 us
- Random Writes: up to 50 us
- Sequential Reads: up to 15 us
- Sequential Writes: up to 15 us
- Drive Ready Time: 8 s
- Read (4KB, QD1/QD32): 0.2 ms/0.8 ms
- Write (4KB, QD1/QD32): 0.08 ms/1 ms
- TBW: 960 GB: 1,366 TB7)
- Non-Recoverable Read Error: 1 sector per 1017 bits read
- MTBF: 2,000,000 hours
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$486.00Designed for everyday computing, the Samsung 860 EVO is powered by Samsung's latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s, a large capacity and exceptional reliability and expanded compatibility. -
Samsung SSD 983 DCT 1,920GB V-NAND 3bit MLC, M.2, NVME, R/W (Max) 3,000MB/s/1,4000MB/s- 3 Years Warr$741.00Sequential Reads: up to 3,000 MB/s3) Sequential Writes: up to 1,400 MB/s3) Random Reads: up to 480K IOPS Random Writes: up to 42K IOPS Random Reads: up to 85 us Random Writes: up to 50 us Sequential Reads: up to 15 us Sequential Writes: up to 15 us Drive Ready Time: 8 s TBW: 1,920 GB: 2,733 TB7) Non-Recoverable Read Error: 1 sector per 1017 bits read MTBF: 2,000,000 hours
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