M.2

Sequential Reads: up to 3,000 MB/s3) Sequential Writes: up to 1,400 MB/s3) Random Reads: up to 480K IOPS Random Writes: up to 42K IOPS Random Reads: up to 85 us Random Writes: up to 50 us Sequential Reads: up to 15 us Sequential Writes: up to 15 us Drive Ready Time: 8 s TBW: 1,920 GB: 2,733 TB7) Non-Recoverable Read Error: 1 sector per 1017 bits read MTBF: 2,000,000 hours

Designed for everyday computing, the Samsung 860 EVO is powered by Samsung's latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s, a large capacity and exceptional reliability and expanded compatibility.